拿了个graduate degree in business,想考CPA,还差两门课:auditing和taxation, 问了当地大学的商学院,不给graduate non-degree admission,没法修课。 请问各位达人知道我该去哪里修这两门graduate level的课吗? 多谢!
b*c
4 楼
Dear all: Would someone please find an electronic article for me? "Boronic acids as fructose sensors. Structure determination of the complexes involved using 1JCC coupling constants Authors: Jens Chr. Norrild and Hanne Eggert J. Chem. Soc., Perkin Trans. 2, 1996, 2583 - 2588, DOI: 10.1039/P29960002583" My email address is b******[email protected] Thank you very much!
r*e
5 楼
不知道在这里发合不合适,lz小白,求指教:) 1. Which direction has slowest etch rate for Si? Why 2. Why you do not want H in RIE?
Update:问了官方,说本科的课程也可以.我以为如果是本科课程,就要30学分本科,如果是研究生课程,就要18学分研究生课程,不可以mix呢....谢谢!!! ========== 谢谢提醒! 打算去问问官方了。 我查了查本州的规定: Received a graduate degree in business from an institution recognized by CHEA or accredited by AACSB with 30 semester hours in accounting at the undergraduate level, or 18 semester hours of accounting at the graduate level with at least one course in each of the following: • financial accounting, • management accounting, • auditing (Internal auditing may not be used for auditing, but may be used as an elective), • taxation, and • professional ethics and responsibilities. 我有graduate degree in business,有24 semester hours in accounting at graduate level,但是没有auditing和taxation的课。 不知道按照这个规定,24 semester hours in accounting at graduate level,再加上 6 semester hours in accounting at undergraduate level行不行。。。
I see. So it seems H2 is utilized for controlling the etching rate?
【在 a*******i 的大作中提到】 : http://web.utk.edu/~prack/Thin films/Etching.pdf : H will form HF with fluoride thus reduce etch rate.
a*i
20 楼
And selectivity
【在 r**********e 的大作中提到】 : I see. So it seems H2 is utilized for controlling the etching rate?
r*e
21 楼
I see. Thanks:)
【在 a*******i 的大作中提到】 : And selectivity
c*5
22 楼
I don't understand the second question either, H2 plasma is widely used in Si RIE as H can control F/C ratio and promote Polymer deposition..Also HBr is used in Si gate etching by forming SiBr4 volatile , how can you don't want H in Si RIE?
【在 c*********5 的大作中提到】 : I don't understand the second question either, H2 plasma is widely used in : Si RIE as H can control F/C ratio and promote Polymer deposition..Also HBr : is used in Si gate etching by forming SiBr4 volatile , how can you don't : want H in Si RIE?
a*i
24 楼
我猜是那个人复述的时候记错题了,或者这道题还有什么前提条件
【在 c*********5 的大作中提到】 : I don't understand the second question either, H2 plasma is widely used in : Si RIE as H can control F/C ratio and promote Polymer deposition..Also HBr : is used in Si gate etching by forming SiBr4 volatile , how can you don't : want H in Si RIE?