Mitsubishi Electric Research lab is seeking a highly motivated intern to carry out research work on Semiconductor RF Power Devices. The ideal candidate would be in the middle or second half of a Ph.D. program in Semiconductor and large bandgap Power devices Physics, design and device modeling. Strong simulation skill and theoretical knowledge in semiconductor device are expected. Knowledge of thermal mechanisms in semiconductor devices, TCAD simulation and other device simulation tools are an asset. The duration of the internship will be 3 to 6 months. Early application for a longer duration is encouraged. If you are interested, please contact Dr. Koon Hoo Teo at t*[email protected]