TI new 300mm fab....# EE - 电子工程
M*0
1 楼
MERL is seeking a highly motivated, qualified individual to join our 3 month
internship program to carry research in the area of high power device
semiconductors and electronics. The ideal candidate should have a
significant background in the simulation and modeling of high power
semiconductor devices. Proficiency in the simulation and design of RF power
amplifier and the various transmitter architectures would be a great asset.
Candidates who hold a PhD or in their senior years of a Ph.D. program are
encouraged to apply.
Apply via email to Dr. Teo at t*[email protected]
internship program to carry research in the area of high power device
semiconductors and electronics. The ideal candidate should have a
significant background in the simulation and modeling of high power
semiconductor devices. Proficiency in the simulation and design of RF power
amplifier and the various transmitter architectures would be a great asset.
Candidates who hold a PhD or in their senior years of a Ph.D. program are
encouraged to apply.
Apply via email to Dr. Teo at t*[email protected]