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Title: Fabrication of Integrated Field-Effect Transistors and Detecting
System Based on CVD Grown Graphene
ABSTRACT:
An integrated field-effect transistors based on large-area multilayer
graphene produced by chemical vapor deposition was fabricated in this work.
A planar Au sheet was used as gate electrode integrated with graphene FET to
obtain perpendicular electrical field between gate and graphene substrate.
Graphene film was transferred to cover indium tin oxides films which were
used as drain and source electrodes. By this method, the contact resistance
between graphene and electrodes which caused by PMMA residues in chemical
vapor deposition process was almost eliminated. An electrical detecting
system was designed to detect equivalent resistance of the FETs, which
indicated that the performance of the FETs was associated with the width of
conducting channel, the electrical field intensity between gate and graphene
, and the ion concentration of electrolyte. ATP was selected as electrolyte
in this paper. The integrated FET could achieve high sensitivity to detect
ATP as low as 10 pM and the equivalent resistance of the FET showed a good
correlation with ATP concentration from 10 pM to 10M. These results may
provide better understanding and useful information for the design of
integrated graphene FETs biosensors.
Send me your contact information and research interests.
System Based on CVD Grown Graphene
ABSTRACT:
An integrated field-effect transistors based on large-area multilayer
graphene produced by chemical vapor deposition was fabricated in this work.
A planar Au sheet was used as gate electrode integrated with graphene FET to
obtain perpendicular electrical field between gate and graphene substrate.
Graphene film was transferred to cover indium tin oxides films which were
used as drain and source electrodes. By this method, the contact resistance
between graphene and electrodes which caused by PMMA residues in chemical
vapor deposition process was almost eliminated. An electrical detecting
system was designed to detect equivalent resistance of the FETs, which
indicated that the performance of the FETs was associated with the width of
conducting channel, the electrical field intensity between gate and graphene
, and the ion concentration of electrolyte. ATP was selected as electrolyte
in this paper. The integrated FET could achieve high sensitivity to detect
ATP as low as 10 pM and the equivalent resistance of the FET showed a good
correlation with ATP concentration from 10 pM to 10
provide better understanding and useful information for the design of
integrated graphene FETs biosensors.
Send me your contact information and research interests.
