第二批青年千人点评--张韵(CS中做材料的)# Returnee - 海归
g*e
1 楼
213 张韵
(CS, CVD) 男 1982/09/22 中国科学院半导体研究所 工程与材料科学
2011年07月毕业于[美国]佐治亚理工学院 [美国]高平公司 工艺研发工程师
/Process Development Engineer
个人linkedin信息：
http://www.linkedin.com/pub/yun-%E5%BC%A0%E9%9F%B5-z/13/ab2/7b3
博士老板的主页bublicaion：
http://users.ece.gatech.edu/~shensc/publications.html
其中属于本千青的文章只有：（只有一个APL还OK）
S.-C. Shen, Y. Zhang, D. Yoo, J. Limb, J. Ryou, and R. D. Dupuis, "
Comparison of GaN avalanche photodiodes fabricated on SiC and GaN substrates
," ECS Transactions, vol. 11, no. 5, p. 91, 2007
D. Yoo, J. Limb,, J.-H. Ryou, Y. Zhang, S.-C. Shen, R. D. Dupuis, D. Hanser,
E. Preble, and K. Evans, "AlxGa1-xN Ultraviolet Avalanche Photodiodes Grown
on GaN Substrates," IEEE Photonics Technology Letters, vol. 19, no. 17, pp.
1313-1315, Sept., 2007
S.-C. Shen, Y. Zhang, D. Yoo, J. Limb, J.-H. Ryou, P. D. Yoder, and R. D.
Dupuis, "Performance of Deep ultraviolet GaN avalanche photodiodes grown by
MOCVD," IEEE Photonics Technology Letters, vol. 19, no. 21, pp. 1744-1746,
Nov. 2007
J. P. Liu, J.-H. Ryou, D. Yoo, Y. Zhang, J. Limb, C. A. Horne, S-C. Shen,
and R. D. Dupuis, D. Hanser, E. Prebe, and K. Evans, " III-nitride
heterostructure field effect transistors grown on semi-insulating GaN
substrate without interface charge," Applied Physics Letters, vol. 92, no.
13, p 133513-1-3, March 2008
Y. Zhang, D. Yoo, J. Limb, J. Ryou, R. Dupuis, and S.-C. Shen, "GaN
ultraviolet avalanche photodiode fabricated on free-standing bulk GaN
substraes," Physica Status Solidi (c), vol. 5, no. 6, p. 2290-2292, May 2008
.
J. Limb, D. Yoo, Y. Zhang, J.-H. Ryou, S.-C. Shen, and R. D. Dupuis, "GaN
ultraviolet avalanche photodiodes grown on 6H-SiC substrates with SiN
passivation," Electronics Letters,vol. 44, p. 313, 2008
J.-H. Ryou, J.-P. Liu, Y. Zhang, C. A. Horne, W. Lee, S.-C. Shen, and R.D.
Dupuis, "Surface treatment on the growth surface of semi-insulating GaN bulk
substrate for III-nitride heterostructure field-effect transistors,"
Physica Status Solidi (c), vol. 5, no. 6, p. 1849-1851, May 2008
Y. Zhang, D. Yoo, J. Limb, J. Ryou, R. Dupuis, and S.-C. Shen, "GaN
ultraviolet avalanche photodiode fabricated on free-standing bulk GaN
substrates," Physica Status Solidi (c), vol. 5, no. 6, p. 2290-2292, May
2008
R. D. Dupuis, J.-H. Ryou, S.-C. Shen, P. D. Yoder, Y. Zhang, H. J. Kim, S.
Choi, and Z. Lochner, "Growth and fabrication of high-performance GaN-based
ultraviolet avalanche photodiodes," Journal of Crystal Growth, vol. 310, pp.
5217-5222, 2008.
Y. Zhang, S.-C. Shen, H.-J. Kim, S. Choi, J.-H. Ryou, R. D. Dupuis, and B.
Narayan, "Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates,"
Applied Physics Letters, vol. 94, pp. 221109, June 4, 2009.
S. Choi, H. Kim, Y. Zhang, X. Bai, D. Yoo, J. Limb, J.-H. Ryou, S.-C. Shen,
P.D. Yoder, and R.D. Dupuis, "Geiger-mode operation of GaN avalanche
photodiodes grown on GaN substrates," IEEE Photonics Technology Letters, vol
. 21, no. 20, pp. 1526-1528, Oct. 15, 2009.
S.-C. Shen, Y.-C. Lee, H.-J. Kim, Y. Zhang, S. Choi, R. D. Dupuis, and J.-H.
Ryou, "Surface leakage in GaN/InGaN double heterojunction bipolar
transistors," IEEE Electron Device Letters, vol. 30, no 11, pp. 1119-1121,
November, 2009
J. Liu, Y. Zhang, Z. Lochnwe, S. Kim, H, Kim, J.-H. Ryou, S.-C. Shen, P. D.
Yoder, R. D. Dupuis, Q. Wei, K. Sun, A. Fisher, and F. Ponce, "Performance
improvement of InGaN-based laser diodes by epitaxial layer structure design,
" Proc. of SPIE, Vol. 7602, pp. 760219-1 - 6, 2010
S. Choi, H.-J. Kim. Z. Lochner, Y. Zhang, Y.-C. Lee, S.-C. Shen, J.-H. Ryou,
and R. D. Dupuis, "Threshold voltage control of InAlN/GaN heterostructure
field-effect transistors for depletion- and enhancement-mode operation,"
Applied Physics Letters, Vol. 96, pp. 243506-1 - 3, 2010
Y.-C. Lee, H.-J. Kim, Y. Zhang, S. Choi, R. D. Dupuis, J.-H. Ryou, and S.-C.
Shen, "High-performance GaN/InGaN heterojunction bipolar transistors using
a direct-growth approach," Phys. Status Solidi C, Vol. 7, No. 7-8, pp. 1970-
1973, May, 2010
Y.-C. Lee, Y. Zhang, H.-J. Kim, S. Choi, Z. Lochner, R. D. Dupuis, J.-H.
Ryou, and S.-C. Shen, "High-current-gain direct-growth GaN/InGaN double
heterojunction bipolar transistors," IEEE Transactions on Electron Devices,
Vol. 57, No. 11, pp. 2964-2969, November 2010
Y. Zhang, J.-P. Liu, T.-T. Kao, S. Kim, Y.-C. Lee, Z. Lochner, R. D. Dupuis,
J.-H. Ryou, P. D. Yoder, and S.-C. Shen, " Performance Enhancement of InGaN
-based Laser Diodes Using a Step-Graded AlxGa1-xN Electron Blocking Layer,"
accepted for publication in the International Journal of High Speed
Electronics and Systems, Nov. 2010
Z. Lochner, H.-J. Kim, S. Choi, Y.-C. Lee, Y. Zhang, S.-C. Shen, J.-H. Ryou,
and R. D. Dupuis, "Growth and characterization of NpN heterojunction
bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases," Journal of
Crystal Growth, Vol. 315, no. 1, pp. 278-282, 2011
Y. Zhang, Y. Lee, Z. Lochner, H. Kim, S. Choi, J.-H. Ryou, R. D. Dupuis, and
S.-C. Shen, "High-Performance GaN/InGaN double heterojunction bipolar
transistors on with power density > 240 kW/cm2," to be published in Physica
Status Solidi (c) (Accepted on March 3, 2011)
Y. Zhang, T.-T. Kao, J.-P. Liu, Z. Lochner, S.-S. Kim, J.-H. Ryou, R. D.
Dupuis, and S.-C. Shen "Effects of a step-graded AlxGa1-xN electron blocking
layer in InGaN-based laser diodes," submitted to Journal of Applied Physics
,2011
S.-C. Shen, R. D. Dupuis, Y.-C. Lee, H.-J. Kim, Y. Zhang, Z. Lochner, P. D.
Yoder, and J.-H. Ryou, "GaN/InGaN Heterojunction Bipolar Transistors with fT
> 5.3 GHz," submitted to IEEE Electron Device Letters, 2011
(CS, CVD) 男 1982/09/22 中国科学院半导体研究所 工程与材料科学
2011年07月毕业于[美国]佐治亚理工学院 [美国]高平公司 工艺研发工程师
/Process Development Engineer
个人linkedin信息：
http://www.linkedin.com/pub/yun-%E5%BC%A0%E9%9F%B5-z/13/ab2/7b3
博士老板的主页bublicaion：
http://users.ece.gatech.edu/~shensc/publications.html
其中属于本千青的文章只有：（只有一个APL还OK）
S.-C. Shen, Y. Zhang, D. Yoo, J. Limb, J. Ryou, and R. D. Dupuis, "
Comparison of GaN avalanche photodiodes fabricated on SiC and GaN substrates
," ECS Transactions, vol. 11, no. 5, p. 91, 2007
D. Yoo, J. Limb,, J.-H. Ryou, Y. Zhang, S.-C. Shen, R. D. Dupuis, D. Hanser,
E. Preble, and K. Evans, "AlxGa1-xN Ultraviolet Avalanche Photodiodes Grown
on GaN Substrates," IEEE Photonics Technology Letters, vol. 19, no. 17, pp.
1313-1315, Sept., 2007
S.-C. Shen, Y. Zhang, D. Yoo, J. Limb, J.-H. Ryou, P. D. Yoder, and R. D.
Dupuis, "Performance of Deep ultraviolet GaN avalanche photodiodes grown by
MOCVD," IEEE Photonics Technology Letters, vol. 19, no. 21, pp. 1744-1746,
Nov. 2007
J. P. Liu, J.-H. Ryou, D. Yoo, Y. Zhang, J. Limb, C. A. Horne, S-C. Shen,
and R. D. Dupuis, D. Hanser, E. Prebe, and K. Evans, " III-nitride
heterostructure field effect transistors grown on semi-insulating GaN
substrate without interface charge," Applied Physics Letters, vol. 92, no.
13, p 133513-1-3, March 2008
Y. Zhang, D. Yoo, J. Limb, J. Ryou, R. Dupuis, and S.-C. Shen, "GaN
ultraviolet avalanche photodiode fabricated on free-standing bulk GaN
substraes," Physica Status Solidi (c), vol. 5, no. 6, p. 2290-2292, May 2008
.
J. Limb, D. Yoo, Y. Zhang, J.-H. Ryou, S.-C. Shen, and R. D. Dupuis, "GaN
ultraviolet avalanche photodiodes grown on 6H-SiC substrates with SiN
passivation," Electronics Letters,vol. 44, p. 313, 2008
J.-H. Ryou, J.-P. Liu, Y. Zhang, C. A. Horne, W. Lee, S.-C. Shen, and R.D.
Dupuis, "Surface treatment on the growth surface of semi-insulating GaN bulk
substrate for III-nitride heterostructure field-effect transistors,"
Physica Status Solidi (c), vol. 5, no. 6, p. 1849-1851, May 2008
Y. Zhang, D. Yoo, J. Limb, J. Ryou, R. Dupuis, and S.-C. Shen, "GaN
ultraviolet avalanche photodiode fabricated on free-standing bulk GaN
substrates," Physica Status Solidi (c), vol. 5, no. 6, p. 2290-2292, May
2008
R. D. Dupuis, J.-H. Ryou, S.-C. Shen, P. D. Yoder, Y. Zhang, H. J. Kim, S.
Choi, and Z. Lochner, "Growth and fabrication of high-performance GaN-based
ultraviolet avalanche photodiodes," Journal of Crystal Growth, vol. 310, pp.
5217-5222, 2008.
Y. Zhang, S.-C. Shen, H.-J. Kim, S. Choi, J.-H. Ryou, R. D. Dupuis, and B.
Narayan, "Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates,"
Applied Physics Letters, vol. 94, pp. 221109, June 4, 2009.
S. Choi, H. Kim, Y. Zhang, X. Bai, D. Yoo, J. Limb, J.-H. Ryou, S.-C. Shen,
P.D. Yoder, and R.D. Dupuis, "Geiger-mode operation of GaN avalanche
photodiodes grown on GaN substrates," IEEE Photonics Technology Letters, vol
. 21, no. 20, pp. 1526-1528, Oct. 15, 2009.
S.-C. Shen, Y.-C. Lee, H.-J. Kim, Y. Zhang, S. Choi, R. D. Dupuis, and J.-H.
Ryou, "Surface leakage in GaN/InGaN double heterojunction bipolar
transistors," IEEE Electron Device Letters, vol. 30, no 11, pp. 1119-1121,
November, 2009
J. Liu, Y. Zhang, Z. Lochnwe, S. Kim, H, Kim, J.-H. Ryou, S.-C. Shen, P. D.
Yoder, R. D. Dupuis, Q. Wei, K. Sun, A. Fisher, and F. Ponce, "Performance
improvement of InGaN-based laser diodes by epitaxial layer structure design,
" Proc. of SPIE, Vol. 7602, pp. 760219-1 - 6, 2010
S. Choi, H.-J. Kim. Z. Lochner, Y. Zhang, Y.-C. Lee, S.-C. Shen, J.-H. Ryou,
and R. D. Dupuis, "Threshold voltage control of InAlN/GaN heterostructure
field-effect transistors for depletion- and enhancement-mode operation,"
Applied Physics Letters, Vol. 96, pp. 243506-1 - 3, 2010
Y.-C. Lee, H.-J. Kim, Y. Zhang, S. Choi, R. D. Dupuis, J.-H. Ryou, and S.-C.
Shen, "High-performance GaN/InGaN heterojunction bipolar transistors using
a direct-growth approach," Phys. Status Solidi C, Vol. 7, No. 7-8, pp. 1970-
1973, May, 2010
Y.-C. Lee, Y. Zhang, H.-J. Kim, S. Choi, Z. Lochner, R. D. Dupuis, J.-H.
Ryou, and S.-C. Shen, "High-current-gain direct-growth GaN/InGaN double
heterojunction bipolar transistors," IEEE Transactions on Electron Devices,
Vol. 57, No. 11, pp. 2964-2969, November 2010
Y. Zhang, J.-P. Liu, T.-T. Kao, S. Kim, Y.-C. Lee, Z. Lochner, R. D. Dupuis,
J.-H. Ryou, P. D. Yoder, and S.-C. Shen, " Performance Enhancement of InGaN
-based Laser Diodes Using a Step-Graded AlxGa1-xN Electron Blocking Layer,"
accepted for publication in the International Journal of High Speed
Electronics and Systems, Nov. 2010
Z. Lochner, H.-J. Kim, S. Choi, Y.-C. Lee, Y. Zhang, S.-C. Shen, J.-H. Ryou,
and R. D. Dupuis, "Growth and characterization of NpN heterojunction
bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases," Journal of
Crystal Growth, Vol. 315, no. 1, pp. 278-282, 2011
Y. Zhang, Y. Lee, Z. Lochner, H. Kim, S. Choi, J.-H. Ryou, R. D. Dupuis, and
S.-C. Shen, "High-Performance GaN/InGaN double heterojunction bipolar
transistors on with power density > 240 kW/cm2," to be published in Physica
Status Solidi (c) (Accepted on March 3, 2011)
Y. Zhang, T.-T. Kao, J.-P. Liu, Z. Lochner, S.-S. Kim, J.-H. Ryou, R. D.
Dupuis, and S.-C. Shen "Effects of a step-graded AlxGa1-xN electron blocking
layer in InGaN-based laser diodes," submitted to Journal of Applied Physics
,2011
S.-C. Shen, R. D. Dupuis, Y.-C. Lee, H.-J. Kim, Y. Zhang, Z. Lochner, P. D.
Yoder, and J.-H. Ryou, "GaN/InGaN Heterojunction Bipolar Transistors with fT
> 5.3 GHz," submitted to IEEE Electron Device Letters, 2011
