从网上下载了器件公司的Pspice model。仿真不工作。写信给他们，他们改了一下，回
了过来。说问题解决了。我试了试，还不行。
麻烦高手给看看。哪里有问题。
我用的是Pspice 9.2.3。有capture的。
从他们发过来的model file看，也是9.2.3的。
多谢，
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Arial;}}
{\*\generator Msftedit 5.41.15.1515;}\viewkind4\uc1\pard\f0\fs20 * PSpice
Model Editor - Version 9.2.3\par
\par
* source EPC1012DEV1\par
* Revisions: \par
* 10/19/10: Changed voltage dependent capacitances to be compatable with
PSPICE.\par
* 10/19/10: Added updated RDSON parameters\par
* 10/19/10: Added simplified drain current equation\par
.subckt EPC1012 gatein drainin sourcein\par
.param aWg=146 k1=7 k2=1.85 k4=1.0 \par
+\tab ags1=1.02e-10 ags2=1.17e-10 ags3=1.07e-12 ags4=1.25 ags5=.156 \par
+\tab agd1=0.785e-11 agd2=0.34e-10 agd3=-1.25 agd4=4.18 agd5=.00513e-12\par
+\tab asd1=1.00e-10 asd2=0.025e-12 asd3=-5.59 asd4=2.00 asd5=0.4e-10 asd6
=-15 asd7=3.0 asd8=0.3e-12\par
+\tab dgs1=4.3e-7 dgs2=2.6e-13 dgs3=.8 dgs4=.23 \par
+\tab aITc=.0025 aSTc=.0005\par
\par
\par
rd drainin drain .0212\par
rs source sourcein .0001\par
rg gatein gate .6\par
\par
*Large resistors to aid convergence\par
Rcsdconv drain source \{100000Meg/aWg\}\par
Rcgsconv gate source \{100000Meg/aWg\}\par
Rcgdconv gate drain \{100000Meg/aWg\}\par
\par
\par
gswitch drain source Value \{if( v(drain,source)>0.0,\par
+\tab ((1-aITc*(Temp-25))*k1*0.5*ags5*log(1.0+exp((v(gate,source)-k2)/ags5))
*(1-exp(-(k4*(1-aSTc*(Temp-25)))*v(drain,source)))),\par
+ \tab (-1*(1-aITc*(Temp-25))*k1*0.5*ags5*log(1.0+exp((v(gate,drain)-k2)/
ags5))*(1-exp(-(k4*(1-aSTc*(Temp-25)))*v(source,drain))))\par
+\tab )\}\par
\par
ggsdiode gate source VALUE \{0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-
1)+dgs2*(exp((v(gate,source))/dgs4)-1))\}\par
\par
ggddiode gate drain Value \{0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)
+dgs2*(exp((v(gate,drain))/dgs4)-1))\}\par
\par
*Parasitic gate-source capacitance\par
C_GS gate source \{ags1\}\par
*Model for voltage dependent gate-source capacitance\par
E_IGS tl_gs bl_gs value = \{0.5*ags2*(v(gate,source)+2*ags5*log(cosh((v(gate
,source)-ags4)/\par
+\tab (2*ags5))/cosh((-ags4)/(2*ags5))))+ags3*0.5*v(gate,source)*V(gate,
source)\}\par
V_INGS br_gs bl_gs 0.0\par
C_IGS br_gs tl_gs \{1.0\}\par
*R_IGS tr_gs tl_gs 0.001 \par
F_IGS gate source V_INGS 1\par
R_IGS2 bl_gs source 10Meg\par
\par
*Parasitic gate-drain capacitance \par
C_GD gate drain \{agd1\}\par
*Model for voltage dependent gate-drain capacitance\par
E_IGD tl_gd bl_gd value = \{0.5*agd2*(v(gate,drain)+2*agd4*log(cosh((v(gate,
drain)-agd3)/(2*agd4))/\par
+\tab cosh((-agd3)/(2*agd4))))+agd5*0.5*v(gate,drain)*V(gate,drain) \}\par
V_INGD br_gd bl_gd 0.0\par
C_IGD br_gd tl_gd \{1.0\}\par
*R_IGD tr_gd tl_gd 0.001 \par
F_IGD gate drain V_INGD 1\par
R_IGD2 bl_gd drain 10Meg\par
\par
*Parasitic source-drain capacitance \par
C_SD source drain \{asd1\}\par
*Model for voltage dependent source-drain capacitance\par
E_ISD tl_sd bl_sd value = \{0.5*asd2*(v(source,drain)+2*asd4*log(cosh((v(
source,drain)-asd3)/\par
+ (2*asd4))/cosh((-asd3)/(2*asd4)))) + 0.5*asd5*(v(source,drain)+2*asd7*log
(cosh((v(source,drain)-asd6)/\par
+ (2*asd7))/cosh((-asd6)/(2*asd7))))+asd8*0.5*v(source,drain)*V(source,
drain) \}\par
V_INSD br_sd bl_sd 0.0\par
C_ISD br_sd tl_sd \{1.0\}\par
*R_ISD tr_sd tl_sd 0.001 \par
F_ISD source drain V_INSD 1\par
R_ISD2 bl_sd drain 10Meg\par
\par
.ends\par
}
